2SD1001 features world standard miniature package:sot-89. high collector-emitter voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5v collector current (dc) i c 300 ma collector current (pulse) * i c 500 ma total power dissipation p t 2.0 w junction temperature t j 150 storage temperature t stg -55to+150 * pulse test pw 10ms, duty cycle 50%. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =80v,i e = 0 a 100 na emitter cutoff current i ebo v eb =5.0v,i c = 0 a 100 na v ce =1.0v,i c = 50 ma 90 200 400 v ce =2.0v,i c = 300 ma 30 80 collector saturation voltage * v ce(sat) i c = 300 ma, i b = 30 ma 0.15 0.6 v base saturation voltage * v be(sat) i c = 300 ma, i b = 30 ma 0.86 1.2 v base-emitter voltage * v be v ce =6.0v,i c = 10 ma 600 645 700 mv gain bandwidth product f t v ce =6.0v,i e = -10 ma 140 mhz output capacitance c ob v cb =6v,i e = 0, f = 1.0 mhz 70 pf * pulsed: pw 350 s, duty cycle 2% dc current gain * h fe h fe classification marking em el ek hfe 90 180 135 270 200 400 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification 4008-318-123
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